Ball Limiting Metallurgy, Interconnection Structure Including the Same, and Method of Forming an Interconnection Structure

ABSTRACT

A ball-limiting metallurgy includes a substrate, a barrier layer formed over the substrate, an adhesion layer formed over the barrier layer, a first solderable layer formed over the adhesion layer, a diffusion barrier layer formed over the adhesion layer, and a second solderable layer formed over the diffusion barrier layer.

CROSS-REFERENCE TO RELATED APPLICATION

This is a Divisional Application of U.S. application Ser. No. 10/724,938filed on Dec. 1, 2003, the disclosure of which is herein incorporated byreference in its entirety.

BACKGROUND

1. Technical Field

The present disclosure relates to interconnection structures forflip-chip attachment of microelectronic device chips to packages.

2. Description of the Related Art

Three different interconnection technologies are employed to provideinterconnection between a chip and a substrate (or chip carrier). Theseinterconnection technologies are tape automated bonding (TAB),wirebonding, and area array. The area array is often call a flip-chipconnection or C4 (controlled-collapse chip connection). The C4technology uses solder bumps deposited on a solder-wettable layeredstructure known as a ball-limiting metallurgy (BLM) on the chip. Sincethe C4 technology uses an array of solder bumps that can be placed overthe entire surface area of the chip, it can achieve a higher density ofinput/output interconnections and better power dissipation than canwirebonding or TAB, which confine the interconnections to the chipperiphery.

A number of systems have been proposed and evaluated for fabrication ofC4s using lead-free metallurgies. Lead-free solders, such as tin-basedalloys, are now commonly used to avoid the harmful environmental effectsof lead-based alloys. During the fabrication process of a BLM, a “platedthrough the mask” process is employed in which metallurgies, such asTiW/Cr/phased Cr/Cu/Ni/Pb-free alloy, are sequentially deposited

During hot storage, in which wafers are kept at 120-150° C. for over1000 hours, voids form in the copper layer. These voids are apparentlydue to Ni—Cu/Sn intermetallics, which are in turn formed by Ni/Cuinterdiffusion produced by long term thermal exposure. These voids leadto failure in the integrity of the BLM structure and are a reliabilityconcern.

SUMMARY OF THE INVENTION

A ball-limiting metallurgy according to an embodiment of the inventionincludes a substrate, a barrier layer formed over the substrate, anadhesion layer formed over the barrier layer, a first solderable layerformed over the adhesion layer, a diffusion barrier layer formed overthe adhesion layer, and a second solderable layer formed over thediffusion barrier layer.

An interconnection structure for flip-chip attachment of microelectronicdevice chips to packages according to an embodiment of the inventionincludes a ball-limiting metallurgy and at least one lead-free solderball formed over the ball-limiting metallurgy. The ball limitingmetallurgy includes a barrier layer formed over the microelectronicdevice chip, an adhesion layer formed over the barrier layer, a firstsolderable layer formed over the adhesion layer, a diffusion barrierlayer formed over the adhesion layer, and a second solderable layerformed over the diffusion barrier layer.

A method for forming an interconnection structure for flip-chipattachment of microelectronic device chips to packages includes forminga barrier layer over a substrate, forming an adhesion layer over thebarrier layer, and forming a resist layer over the adhesion layer, theresist layer having an opening that exposes the adhesion layer. A firstsolderable layer is formed over the adhesion layer through the openingin the resist layer. A diffusion barrier layer is formed over the firstsolderable layer through the opening in the resist layer. A secondsolderable layer is formed over the diffusion barrier layer through theopening in the resist layer. The resist layer is removed, and portionsof the barrier layer and the adhesion layer that extend beyond the firstsolderable layer, the diffusion barrier layer and the second solderablelayer are also removed. At least one solder ball is formed over thesecond solderable layer.

In at least one embodiment of the invention, the diffusion barrier layeris made of CoWP.

These and features of the present invention will become apparent fromthe following detailed description of illustrative embodiments thereof,which is to be read in connection with the accompanying drawings.

BRIEF DESCRIPTION OF DRAWINGS

The invention will be described in detail in the following descriptionof preferred embodiments with reference to the following figureswherein:

FIG. 1 is a cross sectional view of an interconnection structureaccording to an embodiment of the invention; and

FIGS. 2-12 are cross sectional views showing various steps of a methodof forming an interconnection structure according to an embodiment ofthe invention.

DESCRIPTION OF PREFERRED EMBODIMENTS

FIG. 1 is a cross sectional view of an interconnection structureaccording to an embodiment of the invention. The interconnectionstructure 100 includes a substrate 1, and a polyimide layer 16 having anopening 20 formed over the substrate 1. A barrier layer 2, an adhesionlayer 4, a first solderable layer 10, a diffusion barrier layer 12, anda second solderable layer 14 are sequentially formed in the opening 20of the polyimide layer 16. A lead-free solder 18 is formed over thesecond solderable layer 14. In exemplary embodiments of the invention,the first solderable layer 10 is made of Cu, the second solderable layer14 is made of Ni and the diffusion barrier layer 12 is made of CoWP.CoWP does not substantially change the conductivity of Cu, has excellentadhesion to Cu and dielectrics, and acts as a barrier to prevent thediffusion of Cu. The CoWP diffusion barrier layer 12 has beenexperimentally shown to be an almost perfect barrier to the diffusion ofCu atoms into a Ni second solderable layer, thereby preventing thegeneration of voids in the Cu.

FIGS. 2-12 are cross sectional views showing various steps of a methodof forming an interconnection structure according an embodiment of theinvention. As shown in FIG. 2, a barrier layer 2 is blanket depositedover a silicon substrate 1, such as, for example, an SOI, GaAs, or SiGesubstrate. The barrier layer 2 can be made of any suitable material,such as, for example, TiW or Cr, and can be deposited by, for example,sputtering.

As shown in FIG. 3, an adhesion layer 4 is blanket deposited over thebarrier layer 2. The adhesion layer 4 can be made of any suitablematerial, such as, for example, phased CrCu and can be formed bysputtering.

As shown in FIG. 4, a photoresist pattern 6 is formed over the adhesionlayer 4. The photoresist pattern 6 includes an opening 8 in which a C-4is to be formed.

As shown in FIG. 5, a first solderable layer 10 is formed over theadhesion layer 4 through the opening 8 of the photoresist pattern 6. Thefirst solderable layer 10 is preferably made of electroplated Cu and isformed to a thickness of about 1 to 2 microns.

As shown in FIG. 6, a diffusion barrier layer 12 is formed over thefirst solderable layer 10. The diffusion barrier layer 12 is preferablyformed by electroless deposition to a thickness of about 500 to about1500 angstroms. The diffusion barrier layer 12 is preferably made ofCoWP. In an embodiment of the invention in which the diffusion barrierlayer is made of CoWP, the electroless deposition process includesimmersion of the wafer in a dilute Pd solution containing 0.05 g/lPdSO₄, made in 0.5 M H₂SO₄. Immersion of the wafer in the Pd solutionresults in deposition of a monolayer of Pd particles over the copperfirst solderable layer 10 by the following chemical reaction:Cu(metal)+Pd++→Cu+++Pd(nanoparticles)

After the monolayer of Pd particles is deposited over the firstsolderable layer 10, the wafer is immersed in a COWP electroless platingbath. In an embodiment of the invention, the electroless plating bath ismade up of 6 g/l CoSO₄, 2-4 g/l ammonium tungstate, complexed in 40 g/lsodium citrate, 25 g/l boric acid, and 8 g/l Na hypophosphite. Thesolution is kept at about 75-80° C. with a pH of about 9. The platingbath has a plating rate of about 100 A/min, thus depositing a 100 A CoWPlayer over the copper first solderable layer 10 in about 10 minutes. Thewafer is thoroughly rinsed in distilled water after being immersed inthe plating bath.

As shown in FIG. 7, a second solderable layer 14 is formed over thediffusion barrier layer 12. The second solderable layer 14 is made ofany suitable material, such as, for example, nickel, cobalt, iron andalloys of these metals, such as NiFe, CoFe, NiCo or NiCoFe. The secondsolderable layer 14 is preferably formed by electroplating to a depth ofabout 2 to 4 microns.

As shown in FIG. 8, the resist 6 is removed. Portions of the barrierlayer 2 and the adhesion layer 4 that remain around the C-4 structuresare also removed, resulting in the structure shown in FIG. 9. Theportions of the barrier layer 2 and the adhesion layer 4 can be removedby any suitable process, such as, for example, etching or ion milling.

As shown in FIG. 10, a polyimide layer 16 is formed over the secondsolderable layer 14 and the substrate 1. The polyimide layer 16 issubjected to an etching process, such as reactive ion etching, until thesecond solderable layer 14 is exposed, resulting in the structure shownin FIG. 11.

As shown in FIG. 12, a lead-free solder 18 is formed over the secondsolderable layer 14. The lead-free solder 18 can be made of any suitablematerial, such as, for example, tin alloys. The lead-free solder 18 canbe formed by any suitable process, such as, for example, electroplating,solder screening, or injection molded solder (IMS) techniques.Alternatively, solders that are not easily deposited as alloys may beproduced by a sequence of steps. Any series of electroplating, exchangeplating, or electroless deposition steps may be used to deposit thesolder components in the correct proportion, and the solder componentsare later alloyed during a reflow step. For example, if a Cu—Sn alloy isused as the lead-free solder 18, the plating of Sn and Cu can be carriedout sequentially in individual Sn plating solutions and Cu platingsolutions, followed by a final reflow.

Although the illustrative embodiments have been described herein withreference to the accompanying drawings, it is to be understood that thepresent invention and method are not limited to those preciseembodiments, and that various other changes and modifications may beaffected therein by one of ordinary skill in the related art withoutdeparting from the scope or spirit of the invention. All such changesand modifications are intended to be included within the scope of theinvention as defined by the appended claims.

1. A ball-limiting metallurgy, comprising: a substrate; a barrier layerformed over the substrate; an adhesion layer formed over the barrierlayer; a first solderable layer formed over the adhesion layer; adiffusion barrier layer formed over the adhesion layer; and a secondsolderable layer formed over the diffusion barrier layer.
 2. Theball-limiting metallurgy of claim 1, wherein the first solderable layeris made of copper.
 3. The ball-limiting metallurgy of claim 2, whereinthe diffusion barrier layer is made of CoWP.
 4. The ball-limitingmetallurgy of claim 1, wherein the second solderable layer is made ofNi.
 5. The ball-limiting metallurgy of claim 1, wherein the barrierlayer, the adhesion layer, the first solderable layer, the diffusionbarrier layer, and the second solderable layer are surrounded by apolyimide layer.
 6. An interconnection structure for flip-chipattachment of microelectronic device chips to packages, comprising: aball-limiting metallurgy comprising: a barrier layer formed over themicroelectronic device chip; an adhesion layer formed over the barrierlayer; a first solderable layer formed over the adhesion layer; adiffusion barrier layer formed over the adhesion layer; and a secondsolderable layer formed over the diffusion barrier layer; and at leastone lead-free solder ball formed over the second solderable layer. 7.The interconnection structure of claim 6, wherein the first solderablelayer is made of copper.
 8. The interconnection structure of claim 7,wherein the diffusion barrier layer is made of CoWP.
 9. Theinterconnection structure of claim 6, wherein the second solderablelayer is made of Ni.
 10. The interconnection structure of claim 6,wherein the barrier layer, the adhesion layer, the first solderablelayer, the diffusion barrier layer, and the second solderable layer aresurrounded by a polyimide layer.
 11. The interconnection structure ofclaim 6, wherein the at least one lead-free solder ball is made of a tinalloy.